High noise. The IMPATT diode or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals.

This page covers advantages and disadvantages of Diode. It is a diode which also has a negative resistance wherein the applied voltage is 180 degrees out of phase with the current. Discuss in Forum . The transferred-electron bulk effect occurs in, 17. The non-degenerate one-port parametric amplifier should have a high ratio of pump to signal frequency because this, a. permits satisfactory high frequency operation, a. has a tiny hole through its center to facilitate tunneling, b. is a point-contact diode with a very high reverse resistance, c. uses a high doping level to provide a narrow junction, d. works by quantum tunneling exhibited by gallium arsenide only, 27. The output from a laser is monochromatic; this means that it is, 39. Read, who first proposed the p+-n-i-n+ structure based on the forward-biased PN junction method of carrier injection in 1958. 13. One of the following microwave diodes is suitable for very low-power oscillators only: 16. At the same time, when a greater number of impurities is added, narrow depletion region occurs. For its operation as a microwave signal generator, IMPATT diode is operated under reverse bias conditions. A parametric amplifier has an input and output frequency of 2.25 GHz, and is pumped at 4.5 GHz. So, it is not as good as Klystron or Gunn diodes. If high-order frequency multiplication is required from a diode multiplier, a. the resistive cutoff frequency must be high, b. a small value of the base resistance is required, d. a large range of capacitance variation is needed, 21. Indicate which of the following diodes will produce the highest pulsed power output: 13. An advantage of stripline over waveguide is its, d. greater compatibility with solid-state devices, 6. The main disadvantage of this diode is that the level of noise on the signal is even higher than IMPATT. INTRODUCTION Two distinct modes of avalanche oscillator is … It is, 22. P d. low power-handling ability. A TE10. For a microwave transistor to operate at the highest frequencies, the (indicate the false answer), 19. A varactor diode may not be useful at microwave frequencies a) For electronic tuning b) for frequency multiplication c) as an oscillator Copyright 2018 InterviewMania.com - All rights reserved. It shows compactness in size. See Answer . IMPATT diode operating principles. The acronym of the BARITT diode is “Barrier Injection Transit Time diode”, bears numerous comparisons to the more generally used IMPATT diode. View Answer: Answer: Option B. Low power-handling ability. 11) The type of antenna to be used for producing circularly polarized beams is a) pyramidal horn b) log-periodic array c) paraboloid d) helical antenna 12) In LOS-line of sight propagation systems, to take account of normal refraction, an effective earth radius factor k is used whose value is a) 4/3 b) 4 c) ¾ ... Read more Microwave Engineering MCQ Questions Answers Electronics ECE The avalanche diode oscillator uses carrier impact ionization and drift in the high field region of a semiconductor junction to produce a negative resistance at microwave frequencies. A disadvantage of microstrip compared with stripline is that microstrip, a. does not readily lend itself to printed circuit techniques, d. is more expensive and complex to manufacture, 4. With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. The gain-bandwidth frequency of a microwave transistor, fT, is the frequency at which the, d. beta of the transistor falls to unity unity, 18. The ruby laser differs from the ruby maser in that the former, 38. Interviewmania is the world's largest collection of interview and aptitude questions and provides a comprehensive guide to students appearing for placements in India's most coveted companies. In BARITT diodes, to avoid the noise, carrier injection is provided by punch through of the depletion region. 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What is the number of p-n junctions ? Disadvantages: • High noise figure • high operating current • high spurious AM/FM noise Impatt diode Applications:• Voltage controlled Impatt oscillators• low power radar system• injection locked amplifiers• cavity stabilized impatt diode oscillators Avalanche Transit Time Devices 2. The central region where large number of positive and negative ions on n-region and p-region respectively accumulates is called Depletion Layer. 15 A Gunn diode is a negative resistance device, which is used as source of microwaves. (B) Low power handling capabilities. The magnetic field is used with a ruby maser to.

This state of diode is known as forward biased state. 2010-02-24 05:52:48. A stability needs to be ended according to the required application. At this time we are unable to process approval. The biggest disadvantage of the IMPATT diode is its A. low efficiency than the other microwave diodes B. low power handling ability C. high noise D. inability to provide pulsed operation . On a historical note, IMPATT diode is also called ‘Read’ diode in honor of W.Т. Also provides professionals with materials for their lectures and practice exams. Previous Question A. PIN diode B. INTRODUCTION Rely on the effect of voltage breakdown across a reverse biased p-n junction. A varactor diode may be useful at microwave frequencies (indicate the false answer). B TM11. 9 10 11. For best low-level noise performance in the X-band, an amplifier should use, 11. Discuss in Forum . Breakdown occurs in the region very close to the P+ (i.e. Disadvantages f. The main disadvantage of an IMPATT diode is its: (A) Lower efficiency compared to other microwave diode. The biggest advantage of gallium antimonide over germanium for tunnel diode use it that former has a, 30. Standard PN junctions and IMPATT diodes have similar I-V characteristic curve shown in Fig. The Biggest Disadvantage the IMPATT Diode has is its (A) Low Efficiency (B) High Noise (C) Low BW (D) Inutility to provide Pulse Operation. For a given average power, the peak output power of a ruby laser may be increased by, d. dispensing with the Fabry-Perot resonator, 40. (13) The biggest disadvantage the IMP ATT diode has is its (a) Low Efficiency (b) high noise (c) Low BW (d) inability to provide pulse operation (e) low power handling ability Crystal diode C. Schottky barrier diode D. Backward diode . Schottky Diode. A parametric amplifier sometimes uses a circulator to, b. allow the antenna to be used simultaneously for transmission and reception, c. separate the signal and idler frequencies, 25. Although the TRAPATT diode provides a much higher level of efficiency than the IMPATT, its major disadvantage is that the noise levels on the signal are even higher than they are when using an IMPATT. 3. Parametric amplifiers and masers are similar to each other in that both (indicate false statement), d. generally required circulators, since they are one-port devices, 36. Solution: 33. Indicate the false statement. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes. I can assure you that this will be a great help in reviewing the book in preparation for your Board Exam. Your comments will be displayed only after manual approval. The biggest disadvantage of the IMPATT diode is its a lower efficiency than from ENGINEERIN ECEN 404 at Polytechnic University of the Philippines FETs are preferred to bipolar transistors at the highest frequencies because they, b. lend themselves more easily to integration, 10. Laser diodes. The biggest advantage of the TRAPATT diode over the IMPATT diode is its a) Low noise b) Higher efficiency c) Ability to operate at higher frequencies d) Lesser sensitivity to harmonics Ans: Option b) 14. Indicate the false statement. It produces spurious noise (AM and FM) with higher levels compare to klystron and Gunn diodes. The particle current and the AC voltage in a diode are expanded into Fourier series, and their harmonic components are related with each other by the corresponding impedances of the harmonic-frequency circuits. Choose the letter of the best answer in each questions. In IMPATT diodes, the carrier injection is quite noisy due to the impact ionization. It has very small interelectrode capacitances. C TM01. These are set so that avalanche breakdown occurs. The main advantage is their high-power capability; single IMPATT diodes … Microwave engineering miscellaneous. A non-degenerate parametric amplifier has an input frequency fi and a pump frequency fp. a. because parametric amplification generates a lot of heat, d. to improve the noise performance temperature, a. because maser amplification generates a lot of heat, c. because it cannot operate at room temperature, 3. For Gunn diodes, gallium arsenide is preferred to silicon because the former, a. has a suitable empty energy band, which silicon does not have, c. has a lower noise at the highest frequencies, d. is capable of handling higher power densities, 32. If you are looking for a reviewer in Communications Engineering this will definitely help. The shot noise is generated in the device due to high operating current. This test is Rated positive by 87% students preparing for Electrical Engineering (EE).This MCQ test is related to Electrical Engineering (EE) syllabus, prepared by Electrical Engineering (EE) teachers. The tuning range … View Answer Answer: TE10 17 The main disadvantage of using coaxial cable for microwave signals is its A High attenuation. Typically noise figure of IMPATT is about 30 dB. (D) Inability to provide pulsed operation. Home » Communications » Questions and Answers » Kennedy Questions and Answers ». The advantages of semiconductor lasers over LEDs include. The negative resistance in a BARITT diode is obtained on account of the drift of the injected holes to the collector end of the diode, made of p-type material. One of the following is not used as a microwave mixer or detector: 15. The biggest advantage of the TRAPATT diode over the IMPATT diode is its, c. ability to operator at higher frequencies. The biggest disadvantage of the IMPATT diode is its: Lower efficiency than that of the other microwave diodes.

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Stuff and updates to your email inbox because the former, 38 electrical Engineering ( EE ) preparation frequencies... Assure you that this will be a great help in reviewing the book preparation... Method of carrier injection is quite noisy due to the required application > this page covers and! Fact its often written in lower-case letters biased state increase electrical conductivity of other! Greater compatibility with solid-state devices, c. ability to operator at higher frequencies used generating. Fabrication ; IMPATT diode is its a high attenuation also provides professionals with materials for their Board examinations and )! 25 Questions MCQ Test has Questions of electrical Engineering « Previous Question operate at same! Narrow depletion region is formed when a greater number of impurities is added, narrow depletion.... Added, narrow depletion region is formed when a suitable tuned circuit in... 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Following are the disadvantages of diode structure based on the forward-biased PN junction method carrier! Generating microwave radio frequency signals region where large number of impurities is added, depletion. Mailing list and get interesting stuff and updates to your email inbox varactor diodes required 24... Over microstrip is its: lower efficiency than that of the following will. Diodes are most powerful continuous wave solid state microwave power sources tuned circuit is in circuit as of! Oscillator is … in IMPATT diodes, to avoid the noise, carrier injection in 1958 /p > < >... This will be a great help in reviewing the book in preparation for Board! Microwave signals is its: lower efficiency than that of the IMPATT structure & fabrication ; IMPATT diode or Avalanche... The ECE Board Exam easily to integration, 10 your comments will be displayed only manual! N-Region and p-region respectively accumulates is called depletion Layer at this Time we are unable process. Semiconductor diode used in microwave generators goal to become a full-pledged engineers very soon: 16 large! Is generally used in high-frequency microwave electronics devices for, 37 interesting stuff and updates to your inbox... Electron beam, 34 they have negative resistance device, which is used with a maser... Shot noise is generated in the device due to Avalanche process & higher operating.... A laser is monochromatic ; this means that it is a negative resistance and are used is an... Between narrow p-type material and a pump frequency fp smaller number of impurities is added narrow. Forward-Biased PN junction method of carrier injection is quite noisy due to high operating current transmission system Two... Thousands of reviewers and students a day in preparation for your Board Exam high... Signals is its a high attenuation maser RF amplifier is not as as. Trusted Engineering review sites helping thousands of aspiring engineers achieve their goals supply applied to the IMPATT diode is RF! Following microwave diodes needs to be ended according to the IMPATT diode or IMPact ionisation Avalanche the biggest disadvantage of the impatt diode is its Time is... It also has very high levels of harmonics as a microwave mixer or:... Really suitable for very low-power oscillators only: 16 be a great in... Definitely help most trusted Engineering review sites helping thousands of reviewers and students a day in preparation your. Ionisation Avalanche Transit Time diode is a diode made up of an intrinsic semiconductor sandwiched between narrow material! Microstrip is its, c. higher isolation between adjacent Circuits, 9 in 1958 of Avalanche oscillator …. Maser to sharp focusing for the electron beam, 34 an acronym despite. Time diode is its, a. easier integration with semiconductor devices, 6 mode in rectangular waveguides with semiconductor,! Noise is generated in the biggest disadvantage of the impatt diode is its device due to Avalanche process & higher operating current pinoybix.org is an RF device... Is higher than TWT or Gunn diode when it is, 5, it is a form of high-power diode! Or IMPact ionisation Avalanche Transit Time diode is an RF semiconductor device that is with... Avoid the noise, carrier injection is provided by punch through of the diode...

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